• DocumentCode
    2283048
  • Title

    Investigation of Over-Reset Programming in Phase Change Memory

  • Author

    Calderoni, A. ; Ferro, M. ; Varesi, E. ; Fantini, P. ; Rizzi, M. ; Ielmini, D.

  • Author_Institution
    R&D - Technol. Dev., Micron, Agrate Brianza, Italy
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, we provide a detailed electrical and physical characterization of the over-reset (OR) state in terms of amorphous volume shape/thickness, activation energy for conduction, time drift exponent, 1/f noise intensity and threshold voltage. Experimental data are compared with simulations accounting for both the transport and switching mechanisms. Comparison highlights that OR is due to a reversible modification of the active material in the amorphous volume.
  • Keywords
    phase change memories; OR state; active material reversible modification; amorphous volume shape-thickness; over-reset programming; over-reset state; phase change memory; switching mechanisms; threshold voltage; time drift exponent; transport mechanisms; Noise; Phase change materials; Phase change memory; Programming; Resistance; Shape; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2012 4th IEEE International
  • Conference_Location
    Milan
  • Print_ISBN
    978-1-4673-1079-6
  • Type

    conf

  • DOI
    10.1109/IMW.2012.6213675
  • Filename
    6213675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2283048