Title :
Investigation of Over-Reset Programming in Phase Change Memory
Author :
Calderoni, A. ; Ferro, M. ; Varesi, E. ; Fantini, P. ; Rizzi, M. ; Ielmini, D.
Author_Institution :
R&D - Technol. Dev., Micron, Agrate Brianza, Italy
Abstract :
In this work, we provide a detailed electrical and physical characterization of the over-reset (OR) state in terms of amorphous volume shape/thickness, activation energy for conduction, time drift exponent, 1/f noise intensity and threshold voltage. Experimental data are compared with simulations accounting for both the transport and switching mechanisms. Comparison highlights that OR is due to a reversible modification of the active material in the amorphous volume.
Keywords :
phase change memories; OR state; active material reversible modification; amorphous volume shape-thickness; over-reset programming; over-reset state; phase change memory; switching mechanisms; threshold voltage; time drift exponent; transport mechanisms; Noise; Phase change materials; Phase change memory; Programming; Resistance; Shape; Switches;
Conference_Titel :
Memory Workshop (IMW), 2012 4th IEEE International
Conference_Location :
Milan
Print_ISBN :
978-1-4673-1079-6
DOI :
10.1109/IMW.2012.6213675
