Title :
Analysis of hybrid-mode operation of SOI MOSFETs
Author :
Matloubian, Mishel
Author_Institution :
Technol. Center, Hughes Aircraft Co., Carlsbad, CA, USA
Abstract :
In this paper, the characteristics of n-channel SOI MOSFETs in MOS and hybrid-modes of operation are simulated using standard MOS I-V equations. It is shown that the enhancement in drain current in the threshold region is only due to the reduction of the MOS threshold voltage by the applied positive body bias. Only for body voltages higher than 2φP does the BJT contribution to the drain current become significant
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; BJT; MOS I-V equations; MOS threshold voltage; body bias; drain current; hybrid-mode operation; n-channel SOI MOSFETs; simulation; Body regions; Doping; Electrons; Equations; Heterojunctions; MOSFETs; Semiconductor films; Silicon; Threshold voltage; Transconductance;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344541
