DocumentCode
2283086
Title
CMOS/DMOS power IC technology on thin-film SOI substrates
Author
Dolny, G.M. ; Ipri, A.C. ; Batty, M.
Author_Institution
David Sarnoff Res. Center, Princeton, NJ, USA
fYear
1993
fDate
5-7 Oct 1993
Firstpage
98
Lastpage
99
Abstract
A power IC technology integrating low-voltage CMOS with high-voltage current, high-voltage DMOS on a thin-film SOI substrate has been successfully demonstrated. The low-voltage CMOS exhibit good electrical characteristics and the power DMOS can supply more than 3 A of current and is capable of withstanding 120 V
Keywords
CMOS integrated circuits; MOS integrated circuits; integrated circuit technology; power integrated circuits; semiconductor-insulator boundaries; silicon; 120 V; 3 A; CMOS/DMOS power IC technology; electrical characteristics; high-voltage DMOS; high-voltage current; low-voltage CMOS; thin-film SOI substrates; CMOS logic circuits; CMOS process; CMOS technology; Electric variables; MOS devices; Power integrated circuits; Silicon on insulator technology; Substrates; Thin film circuits; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location
Palm Springs, CA
Print_ISBN
0-7803-1346-1
Type
conf
DOI
10.1109/SOI.1993.344543
Filename
344543
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