Title :
Improvement of the performances of SOI CMOS operational amplifiers by means of a gain-boosting stage
Author :
Gentinne, B. ; Colinge, J.P. ; Jespers, P.G.A. ; Eggermont, J.-P.
Author_Institution :
DICE, Univ. Catholique de Louvain, Belgium
Abstract :
Both measurements and simulations have shown that the use of a gain-boosting architecture increases significantly the gain of the amplifier. Up to now, we have obtained very encouraging measurement results: a DC gain of 90 dB and a transition frequency of 30 MHz on a 16 pF load. The next prototypes under fabrication should give full satisfaction and correspond to the initial specifications: a DC gain of 120 dB and a transition frequency of 60 MHz on a 16 pF load
Keywords :
CMOS integrated circuits; operational amplifiers; semiconductor-insulator boundaries; silicon; 16 pF; 30 MHz; 90 dB; DC gain; SOI CMOS operational amplifiers; fabrication; gain-boosting stage; simulations; transition frequency; CMOS technology; Frequency measurement; Gain measurement; MOSFET circuits; Medical simulation; Operational amplifiers; Performance evaluation; Power measurement; SPICE; Voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344545
