Title :
A 1-M bit SRAM on SIMOX material
Author :
Lu, Hsindao ; Yee, Eric ; Hite, Larry ; Houston, Ted ; Sheu, Yea-dean ; Rajgopal, Rajan ; Shen, C.C. ; Hwang, Jeong-mo ; Pollack, Gordon
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A 1-M bit SRAM with 0.8 um feature sizes has been successfully fabricated using SIMOX material. The advantages of SOI for low capacitance, latch-up immunity, and reduced collection charge for single events have been long recognized. The demonstration of a 1-M SRAM at 0.8 um is a significant milestone in the evaluation of the technology for fabrication of very large scale integrated circuits
Keywords :
SIMOX; SRAM chips; VLSI; integrated circuit technology; 0.8 micron; 1 Mbit; SIMOX material; SOI; SRAM; capacitance; collection charge; fabrication technology; latch-up; very large scale integrated circuits; Capacitance; Circuit synthesis; Fabrication; Instruments; Integrated circuit technology; Isolation technology; Random access memory; Resistors; Very large scale integration; Voltage control;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344546
