Title :
Simulation of advanced-LOCOS capability for sub-0.25 micron CMOS isolation
Author :
Jones, S.K. ; Bazley, D.J. ; Beanland, R. ; Badenes, G. ; Scaife, B.
Author_Institution :
GEC Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
The visco-elastic oxidation model has been calibrated on 0.35 and 0.25 /spl mu/m CMOS LOCOS-type isolation structures. Simulation is used to assess the capability of advanced LOCOS options for sub-0.25 micron CMOS. At reduced active area pitch the active-area lifting phenomenon restricts the thickness of field oxide which may be grown. Predictions of the maximum field oxide and active area encroachment are made for an active area pitch of 0.6 /spl mu/m.
Keywords :
CMOS integrated circuits; isolation technology; semiconductor process modelling; 0.25 micron; LOCOS-type isolation structures; active area encroachment; active-area lifting phenomenon; advanced LOCOS capability; maximum field oxide prediction; simulation; submicron CMOS isolation; visco-elastic oxidation model; Calibration; Compressive stress; Materials science and technology; Oxidation; Semiconductor device modeling; Shape measurement; Silicon; Space technology; Temperature measurement; Viscosity;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621368
