Title :
An AFM study of surface morphology of commercial 6" SOI wafers
Author :
Neal, Thomas R. ; Karulkar, Pramod C.
Author_Institution :
Microelectronics Res. Lab., Columbia, MD, USA
Abstract :
Work reported in this paper involved an extensive Atomic Force Microscopic investigation of the surface quality of 6" SIMOX SOI wafers without any epitaxy in conjunction with a study of reliability of 19 nm or 9 nm thick gate oxide. The results illustrate that AFM studies will allow rapid development of high quality SOI substrates and that AFM, when used as a quality control tool, will assure supply of quality substrates
Keywords :
SIMOX; atomic force microscopy; substrates; surface topography; 6 in; Atomic Force Microscopy; SIMOX SOI wafers; SOI substrates; gate oxide; quality control tool; reliability; surface morphology; Atomic force microscopy; Design for quality; Laboratories; Microelectronics; Rough surfaces; Statistics; Substrates; Surface morphology; Surface roughness; Voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344548
