Lowering the Reset Current and Power Consumption of Phase-Change Memories with Carbon-Doped Ge2Sb2Te5

In this paper, a detailed investigation of the electrical performances of Phase-Change Memory test devices integrating carbon-doped Ge₂Sb₂Te₅ (named GST-C) is reported. PCM devices with 5% of carbon atomic content yields more than 50% of current reduction compared to reference GST devices, with a programming window widely superior to two orders of magnitude and a cycling endurance up to 10⁸ cycles. The reset current reduction is finally validated on shrinked "μ-Wall" test devices, proving that carbon- doped GST is a high promising material for future PCM technology.