Comparison of hot-carrier degradation effects in inversion-mode and accumulation-mode fully depleted SOI MOSFETs

Author

Faynot, O. ; Su, L.T. ; Cristoloveanu, S. ; Raynaud, C. ; Chung, J.E. ; Auberton-Hervé, A.J. ; Antoniadis, D.A.

Author_Institution

Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France

fYear

1993

fDate

5-7 Oct 1993

Firstpage

164

Lastpage

165

Abstract

It is demonstrated that ultra-thin film (UTF) inversion-mode (IM) and accumulation-mode (AM) SIMOX MOSFETs behave similarly in terms of hot-carrier degradation. The primary degradation occurs at the interface which is activated but the effects of interface coupling can confuse lifetime predictions. Defects (such as in the buried oxide) must be clearly accounted for and decoupled in order to properly evaluate device lifetime. There was no evidence of significant enhanced degradation in ultra-thin films

Keywords

hot carriers; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; thin film transistors; accumulation-mode; buried oxide; defects; device lifetime; fully depleted SOI MOSFETs; hot-carrier degradation; interface coupling; inversion-mode; ultra-thin films; Aging; Degradation; Doping; Hot carrier effects; Hot carriers; MOSFETs; Semiconductor films; Stress; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344551

Filename

344551