Title :
Comparison of hot-carrier degradation effects in inversion-mode and accumulation-mode fully depleted SOI MOSFETs
Author :
Faynot, O. ; Su, L.T. ; Cristoloveanu, S. ; Raynaud, C. ; Chung, J.E. ; Auberton-Hervé, A.J. ; Antoniadis, D.A.
Author_Institution :
Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
It is demonstrated that ultra-thin film (UTF) inversion-mode (IM) and accumulation-mode (AM) SIMOX MOSFETs behave similarly in terms of hot-carrier degradation. The primary degradation occurs at the interface which is activated but the effects of interface coupling can confuse lifetime predictions. Defects (such as in the buried oxide) must be clearly accounted for and decoupled in order to properly evaluate device lifetime. There was no evidence of significant enhanced degradation in ultra-thin films
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; thin film transistors; accumulation-mode; buried oxide; defects; device lifetime; fully depleted SOI MOSFETs; hot-carrier degradation; interface coupling; inversion-mode; ultra-thin films; Aging; Degradation; Doping; Hot carrier effects; Hot carriers; MOSFETs; Semiconductor films; Stress; Substrates; Threshold voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344551
