Lattice spacing mapping in large silicon ingot using high resolution lattice comparator

Author

Fujimoto, H. ; Waseda, A. ; Xiaowei, Z. ; Nakayama, K. ; Fujii, Kenichi ; Sugiyama, H. ; Ando, M.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan, Tsukuba, Japan

fYear

2002

fDate

16-21 June 2002

Firstpage

304

Lastpage

305

Abstract

Highly pure silicon crystal is used to determine the Avogadro constant through the XRCD method (K. Fujii et al, Metrologia (France), vol. 36, no. 5, pp. 455-64, 1999). In the method, unit cell volume and molar volume has to be measured using standard samples made from an ingot. In this paper, a method of fast lattice spacing mapping in large silicon crystals is described. Resolution of 0.02 ppm is obtained with a measuring time of 5 minutes per point. Measuring time reduction is estimated to be feasible by simple modification of the measurement. The efficacy of this method is discussed.

Keywords

constants; crystal structure; lattice constants; silicon; volume measurement; 5 min; Si; XRCD method Avogadro constant determination; high resolution lattice comparators; highly pure silicon crystals; large silicon ingots; lattice spacing mapping; molar volume measurement; unit cell volume measurement; Energy resolution; Lattices; Optical interferometry; Photonic crystals; Silicon; Strontium; Testing; Time measurement; Volume measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on

Conference_Location

Ottawa, Ontario, Canada

Print_ISBN

0-7803-7242-5

Type

conf

DOI

10.1109/CPEM.2002.1034842

Filename

1034842