Title :
Successive charging/discharging of gate oxides in SOI MOSFETs by sequential hot electron stressing of front/back channel
Author :
Zaleski, Andrzej ; Ioannou, Dimitris E. ; Campisi, George J. ; Hughes, Harold L.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
Abstract :
The purpose of this work is to demonstrate that hot electron stressing one channel in a SOI MOSFET can in fact inject charges into the other channel, and it discusses two important applications of this phenomenon: namely, that it can be used as a new tool for the study of the mechanisms of degradation, and for designing erasing schemes for SOI based flash memories. The measurements were performed on partially and fully depleted SIMOX MOSFETs with LDD and channel lengths down to 0.6 μm
Keywords :
SIMOX; hot carriers; insulated gate field effect transistors; semiconductor storage; semiconductor-insulator boundaries; silicon; 0.6 micron; LDD; SOI MOSFETs; back channel; charge injection; charging; degradation; depleted SIMOX MOSFETs; discharging; erasing; flash memories; front channel; gate oxides; hot electron stressing; Circuits; Degradation; Electrons; Hot carriers; Interface states; Laboratories; MOSFETs; Partial discharges; Stress; Threshold voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344552
