Successive charging/discharging of gate oxides in SOI MOSFETs by sequential hot electron stressing of front/back channel

Author

Zaleski, Andrzej ; Ioannou, Dimitris E. ; Campisi, George J. ; Hughes, Harold L.

Author_Institution

Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA

fYear

1993

fDate

5-7 Oct 1993

Firstpage

162

Lastpage

163

Abstract

The purpose of this work is to demonstrate that hot electron stressing one channel in a SOI MOSFET can in fact inject charges into the other channel, and it discusses two important applications of this phenomenon: namely, that it can be used as a new tool for the study of the mechanisms of degradation, and for designing erasing schemes for SOI based flash memories. The measurements were performed on partially and fully depleted SIMOX MOSFETs with LDD and channel lengths down to 0.6 μm

Keywords

SIMOX; hot carriers; insulated gate field effect transistors; semiconductor storage; semiconductor-insulator boundaries; silicon; 0.6 micron; LDD; SOI MOSFETs; back channel; charge injection; charging; degradation; depleted SIMOX MOSFETs; discharging; erasing; flash memories; front channel; gate oxides; hot electron stressing; Circuits; Degradation; Electrons; Hot carriers; Interface states; Laboratories; MOSFETs; Partial discharges; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344552

Filename

344552