Title :
Comparison of hot-carrier effects in thin-film SOI and gate-all-around accumulation-mode p-MOSFETs
Author :
Flandre, D. ; Francis, P. ; Colinge, J.P. ; Cristoloveanu, S.
Author_Institution :
DICE, Univ. Catholique de Louvain, Belgium
Abstract :
The advantage of symmetrical gate (GAA) SOI structures over regular SOI in the case of AM p-MOSFETs was demonstrated in several respects: suppression of a latch phenomenon, suppression of excessively high hot-electron gate currents which have been experimentally and theoretically correlated with the latch, and better resistance to hot-electron degradation due to the absence of the latch and of the vulnerable buried oxide
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; thin film transistors; accumulation-mode p-MOSFETs; buried oxide; gate-all-around transistors; hot-carrier effects; hot-electron degradation; hot-electron gate currents; latch phenomenon; symmetrical gate structures; thin-film SOI devices; Current measurement; Degradation; Electric breakdown; Hot carrier effects; Linear predictive coding; MOSFET circuits; Medical simulation; Physics; Stress; Thin film transistors;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344553
