Modelling of thin film SOI devices for circuit simulation including per-instance dynamic self-heating effects

Author

Lee, M.S.L. ; Redman-White, W. ; Tenbroek, B.M. ; Robinson, M.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

fYear

1993

fDate

5-7 Oct 1993

Firstpage

150

Lastpage

151

Abstract

Circuit simulation models for thin-film silicon-on-insulator (SOI) MOSFETs have been available for some time. However, these do not take account of the increasingly important self-heating effects that have been widely reported. These effects can lead to a significant reduction in the drain current resulting in negative differential resistance (NDR) in the I/V characteristics of SOI devices. Moreover, recent work has shown that thermal self-heating can also affect transient and small-signal behaviour. Here, we describe the implementation of a model in the SPICE3 code which has been developed to include thermal effects as well as some of the other common characteristics observed in SOI devices. Results of trial simulations are then presented

Keywords

SPICE; circuit analysis computing; insulated gate field effect transistors; negative resistance; semiconductor device models; semiconductor-insulator boundaries; silicon; thermal analysis; thin film transistors; I/V characteristics; MOSFETs; NDR; SPICE3 code; Si; circuit simulation; drain current; dynamic self-heating effects; model; negative differential resistance; small-signal behaviour; thermal effects; thermal self-heating; thin film SOI devices; transient behaviour; Breakdown voltage; Circuit simulation; Frequency; SPICE; Semiconductor thin films; Silicon on insulator technology; Thermal resistance; Thin film circuits; Thin film devices; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344556

Filename

344556