A unified model of threshold voltage, subthreshold slope and interface coupling in thin film SOI MOSFETs

Author

Ionescu, A.M. ; Cristoloveanu, S. ; Rusu, A. ; Chovet, A. ; Hassein-Bey, A.

fYear

1993

fDate

5-7 Oct 1993

Firstpage

144

Lastpage

145

Abstract

Although powerful device simulators are being developed, analytical models are still essential for depicting the underlying physical mechanisms. Recently, attention was paid to a “unified” approach able to account for MOSFET continuous operation from weak to moderate and strong inversion. In this paper, we propose an original model which applies not only to bulk Si and partially depleted SOI MOSFET´s, but also to ultrathin film SOI transistors

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; thin film transistors; MOSFET continuous operation; Si; analytical models; bulk Si; interface coupling; partially depleted SOI MOSFET; subthreshold slope; thin film SOI MOSFETs; threshold voltage; ultrathin film SOI transistors; unified model; Analytical models; Conductive films; Data mining; Linear predictive coding; MOSFET circuits; Numerical simulation; Thin film devices; Threshold voltage; Transconductance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344559

Filename

344559

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2283454