Inversion electron effective mobility in SOI NMOSFETs

Author

Sherony, Melanie J. ; Su, Lisa T. ; Chung, James E. ; Antoniadis, Dimitri A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1993

fDate

5-7 Oct 1993

Firstpage

120

Lastpage

121

Abstract

Due to reported advantages over bulk silicon, thin-film SOI has developed the potential of becoming a mainstream digital technology. In order to accurately model SOI device operation, it is necessary to understand further the channel electron mobility behavior. Some work has been done in characterising the electron mobility in SOI devices and an enhanced mobility effect has been reported by several authors for fully-depleted devices. In these works, the mobility was found to increase for thinner films and this mobility enhancement has been attributed to a decreased vertical electric field in the channel. For the same gate drive, (V_gs-V_th), the thinner fully-depleted SOI device has a reduced transverse field and thus a higher mobility. This work examines the effective mobility (μ_eff) as a function of a transverse effective electric field (E_eff) rather than gate voltage or gate drive

Keywords

carrier mobility; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; thin film transistors; SOI NMOSFETs; SOI device operation; Si-SiO₂; channel electron mobility behavior; effective mobility; enhanced mobility effect; fully-depleted devices; inversion electron effective mobility; thin-film SOI; transverse effective electric field; transverse field; Capacitance; Doping; Electron mobility; Electrostatics; MOSFET circuits; Semiconductor films; Semiconductor thin films; Silicon; Thickness measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344567

Filename

344567