SOI MOSFET with grounded body potential by using the silicon direct bonding (SDB) technology

Author

Kang, Won-gu ; Kang, Suny-won ; Lyu, Jong-Son ; Kang, Sang-won ; Lee, Jin-hyo

Author_Institution

Semicond. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

1993

fDate

5-7 Oct 1993

Firstpage

96

Lastpage

97

Abstract

N-channel SOI MOSFET was fabricated by using the silicon direct bonding (SDB) technology, where its body was tied with a grounded p⁺ polysilicon for eliminating the substrate floating effect. Fabricated SOI MOSFETs show no kinks on their drain current characteristics and much higher breakdown voltage for lower gate voltages, as compared with SOI MOSFETs with a floating body

Keywords

MOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; semiconductor-insulator boundaries; silicon; wafer bonding; SOI MOSFET; Si; Si direct bonding; breakdown voltage; drain current characteristics; grounded body potential; grounded p⁺ polysilicon; n-channel SOI MOSFET; nonfloating body; substrate floating effect elimination; Board of Directors; Boron; Cities and towns; Fabrication; Furnaces; Large Hadron Collider; MOSFET circuits; Mirrors; Silicon; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344574

Filename

344574