Title :
New concepts of SOI modelling for use in circuit simulator
Author :
Lin, J.K. ; Nichols, K.G. ; Redman-White, W.
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this paper some new concepts, which allow us to solve surface potentials for the two surfaces of the double gate controlled SOI device and to carry out general modelling of the device, are presented. Some simulation results from SPICE3e2 are also demonstrated
Keywords :
SPICE; circuit analysis computing; semiconductor device models; semiconductor-insulator boundaries; silicon; surface potential; SOI modelling; SPICE3e2; Si; circuit simulator; double gate controlled SOI device; surface potentials; Bismuth; CMOS digital integrated circuits; Circuit simulation; Computational modeling; Computer science; Computer science education; Control engineering education; Energy consumption; Sun; Threshold voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344576
