Title :
Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs
Author :
Zhao, Wen-Sheng ; Hu, Jun ; Yin, Wen-Yan
Author_Institution :
State Key Lab. of MOI, Zhejiang Univ., Hangzhou, China
Abstract :
Sensitivities of through-Si-via (TSV) interconnects to the process parameters are investigated numerically in this paper. Some important parameters of the coupled interconnects are examined and compared in detail, such as silicon conductivity of the substrate and radii of the TSVs, etc., where MOS effects are treated appropriately. The emerging materials, carbon nanotube (CNT) based TSVs are also included and studied.
Keywords :
MOS integrated circuits; carbon nanotubes; integrated circuit interconnections; sensitivity analysis; three-dimensional integrated circuits; 3D IC; MOS effects; TSV interconnects; carbon nanotube; sensitivity analysis; through-silicon via interconnects; Capacitance; Conductivity; Educational institutions; Electron devices; Silicon; Through-silicon vias;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE
Conference_Location :
Hanzhou
Print_ISBN :
978-1-4673-2288-1
Electronic_ISBN :
2151-1225
DOI :
10.1109/EDAPS.2011.6213744
