Derivation of the full-wave equivalent model of via hole in a two-layered substrate

Author

Shen, Zhongxiang ; Zhang, Qi

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents closed-form expressions for a equivalent circuit model of a via hole in a two-layered dielectric substrate. Analytical expressions are obtained from the formally exact mode-matching formulation of the problem. Numerical results obtained by our closed-form expressions for the scattering parameters are compared to those by Ansoft´s high frequency structure simulator (HFSS). Excellent agreement between them is observed, which verifies the validity of our derived expressions.

Keywords

S-parameters; equivalent circuits; integrated circuit interconnections; mode matching; Ansoft high frequency structure simulator; HFSS; analytical expressions; closed-form expressions; equivalent circuit model; formally exact mode-matching formulation; full-wave equivalent model; scattering parameters; two-layered dielectric substrate; two-layered substrate; via hole; Dielectric substrates; Electromagnetic waveguides; Equivalent circuits; Integrated circuit modeling; Numerical models; Scattering parameters; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE

Conference_Location

Hanzhou

ISSN

2151-1225

Print_ISBN

978-1-4673-2288-1

Electronic_ISBN

2151-1225

Type

conf

DOI

10.1109/EDAPS.2011.6213745

Filename

6213745