DocumentCode
2283941
Title
Analysis of color variation in bonded SOI wafers
Author
Clapis, P.J. ; Ledger, A.M. ; Daniell, K.E.
Author_Institution
Hughes Danbury Optical Syst. Inc., Danbury, CT, USA
fYear
1993
fDate
5-7 Oct 1993
Firstpage
66
Lastpage
67
Abstract
In this paper, we analyze why SOI wafers appear as they do to the naked eye. We show how a thickness variation as small as ten Angstroms can cause a readily discernible color change, and why this optical effect is much stronger in a thinned SOI wafer than in an oxide-coated wafer or in thick SOI wafers
Keywords
etching; polishing; semiconductor-insulator boundaries; silicon; wafer bonding; bonded SOI wafers; color shading; color variation; discernible color change; fringes; optical effect; oxide-coated wafer; thickness variation; thinned SOI wafer; wafer fabrication; Color; Optical device fabrication; Optical films; Optical sensors; Plasma devices; Plasma materials processing; Plasma properties; Reflectivity; Silicon; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location
Palm Springs, CA
Print_ISBN
0-7803-1346-1
Type
conf
DOI
10.1109/SOI.1993.344589
Filename
344589
Link To Document