DocumentCode
2283962
Title
Substrate current fluctuation under low drain voltages in Si-MOSFET´s
Author
Sano, N. ; Natori, K.
Author_Institution
Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
213
Lastpage
216
Abstract
It is shown that anisotropy manifested by the wave-vector dependent impact ionization rates in Si leads to large fluctuation of the substrate current in Si-MOSFET´s. This is especially true at low drain voltages under which the ionization events take place near ionization threshold, where anisotropy is greatest.
Keywords
MOSFET; elemental semiconductors; impact ionisation; semiconductor device reliability; silicon; MOSFET; Si; anisotropy; drain voltages; ionization threshold; substrate current fluctuation; wave-vector dependent impact ionization; Anisotropic magnetoresistance; Electrons; Fluctuations; Impact ionization; Low voltage; Physics; Pulse generation; Semiconductor device reliability; Semiconductor devices; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621375
Filename
621375
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