DocumentCode
2284016
Title
Silicon on diamond heat sinks by bonding and etch back
Author
Söderbärg, Anders ; Edholm, Bengt ; Olsson, Jörgen ; Tiensuu, Stefan ; Johansson, Erik
Author_Institution
Dept. of Technol., Uppsala Univ., Sweden
fYear
1993
fDate
5-7 Oct 1993
Firstpage
58
Lastpage
59
Abstract
In this abstract a concept is presented aimed to increase the heat distribution and to reduce the thermal resistance in SOI-devices. This is realized using a combination of fusion bonding and thinning against stopping layers with deposition of poly-crystalline diamond as the buried isolator. Thus, by replacing oxide with diamond, a Silicon-on-Diamond (SOD) structure is formed
Keywords
diamond; digital simulation; heat sinks; semiconductor device models; semiconductor-insulator boundaries; silicon; wafer bonding; SOD structure; SOI-devices; Si-C; buried isolator; etch back; fusion bonding; heat distribution; heat sinks; poly-crystalline diamond; silicon-on-diamond structure; stopping layers; thermal resistance; Biomembranes; Bonding; Diodes; Etching; Heat sinks; Semiconductor films; Silicon on insulator technology; Temperature; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location
Palm Springs, CA
Print_ISBN
0-7803-1346-1
Type
conf
DOI
10.1109/SOI.1993.344593
Filename
344593
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