• DocumentCode
    2284082
  • Title

    High dose response of as-grown SIMOX substrates

  • Author

    Flament, O. ; Paillet, Ph ; Hervé, D. ; Musseau, O. ; Leray, J.L. ; Aspar, B.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
  • fYear
    1993
  • fDate
    5-7 Oct 1993
  • Firstpage
    52
  • Lastpage
    53
  • Abstract
    The pseudo-MOS transistor (Ψ-MOSFET) has been proposed as a cheap and easy tool to characterize as-grown SOI wafers and to anticipate the radiation hardness performance of technologies manufactured upon these substrates. The aim of this study is to check the ability of this technique to investigate SIMOX response for doses up to 100 Mrad(SiO2). Direct comparison with basic MOS transistors reveals the influence of the process
  • Keywords
    SIMOX; electron traps; insulated gate field effect transistors; radiation hardening (electronics); 100 Mrad; SIMOX response; as-grown SIMOX substrates; electron trapping; high dose response; pseudo-MOS transistor; radiation doses; radiation hardness performance; Annealing; Charge carrier processes; Electron traps; MOS capacitors; MOS devices; MOSFETs; Manufacturing; Shape; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1993. Proceedings., 1993 IEEE International
  • Conference_Location
    Palm Springs, CA
  • Print_ISBN
    0-7803-1346-1
  • Type

    conf

  • DOI
    10.1109/SOI.1993.344596
  • Filename
    344596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2284082