Title :
High dose response of as-grown SIMOX substrates
Author :
Flament, O. ; Paillet, Ph ; Hervé, D. ; Musseau, O. ; Leray, J.L. ; Aspar, B.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
The pseudo-MOS transistor (Ψ-MOSFET) has been proposed as a cheap and easy tool to characterize as-grown SOI wafers and to anticipate the radiation hardness performance of technologies manufactured upon these substrates. The aim of this study is to check the ability of this technique to investigate SIMOX response for doses up to 100 Mrad(SiO2). Direct comparison with basic MOS transistors reveals the influence of the process
Keywords :
SIMOX; electron traps; insulated gate field effect transistors; radiation hardening (electronics); 100 Mrad; SIMOX response; as-grown SIMOX substrates; electron trapping; high dose response; pseudo-MOS transistor; radiation doses; radiation hardness performance; Annealing; Charge carrier processes; Electron traps; MOS capacitors; MOS devices; MOSFETs; Manufacturing; Shape; Temperature; Threshold voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344596
