Characterization of SIMOX material with channeled and unchanneled oxygen implantation

Author

Twigg, M.E. ; Allen, L.P. ; Mrstik, B.J. ; Ardis, L.T.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1993

fDate

5-7 Oct 1993

Firstpage

50

Lastpage

51

Abstract

It is a goal of electronic materials fabrication efforts to produce SIMOX with a low dislocation density in the superficial Si layer (the device layer) as well as a buried oxide (BOX) layer consisting of high quality SiO₂. In this paper, we study the effects of varying the implantation angle in a search for the optimal implantation conditions from the standpoint of both the BOX and the device layer. Using transmission electron microscopy (TEM) and spectroscopic ellipsometry (SE), we show that there is a significant difference between channeled and unchanneled implantation in SIMOX

Keywords

SIMOX; dislocation density; elemental semiconductors; ellipsometry; ion implantation; silicon compounds; transmission electron microscope examination of materials; SIMOX material; Si-SiO₂; buried oxide; channeled oxygen implantation; dislocation density; electronic materials fabrication; implantation angle; implantation conditions; spectroscopic ellipsometry; transmission electron microscopy; unchanneled oxygen implantation; Annealing; Ellipsometry; Fabrication; Implants; Laboratories; Oxygen; Prototypes; Spectroscopy; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344597

Filename

344597