Title :
Characterization of SIMOX material with channeled and unchanneled oxygen implantation
Author :
Twigg, M.E. ; Allen, L.P. ; Mrstik, B.J. ; Ardis, L.T.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
It is a goal of electronic materials fabrication efforts to produce SIMOX with a low dislocation density in the superficial Si layer (the device layer) as well as a buried oxide (BOX) layer consisting of high quality SiO2. In this paper, we study the effects of varying the implantation angle in a search for the optimal implantation conditions from the standpoint of both the BOX and the device layer. Using transmission electron microscopy (TEM) and spectroscopic ellipsometry (SE), we show that there is a significant difference between channeled and unchanneled implantation in SIMOX
Keywords :
SIMOX; dislocation density; elemental semiconductors; ellipsometry; ion implantation; silicon compounds; transmission electron microscope examination of materials; SIMOX material; Si-SiO2; buried oxide; channeled oxygen implantation; dislocation density; electronic materials fabrication; implantation angle; implantation conditions; spectroscopic ellipsometry; transmission electron microscopy; unchanneled oxygen implantation; Annealing; Ellipsometry; Fabrication; Implants; Laboratories; Oxygen; Prototypes; Spectroscopy; Temperature; Transmission electron microscopy;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344597
