Title :
Effect of single vs. multiple implant processing on defect types and densities in SIMOX
Author :
Venables, D. ; Krause, S.J. ; Park, J.C. ; Lee, J.D. ; Roitman, P.
Author_Institution :
Dept. of Chem., Arizona State Univ., Tempe, AZ, USA
Abstract :
In this paper we describe the origin and characteristics of the defect structures in contemporary SIMOX and show how their densities are controlled by the processing method and conditions
Keywords :
SIMOX; dislocation density; ion implantation; semiconductor doping; stacking faults; SIMOX; SOI; defect densities; defect structures; defect types; multiple implant processing; processing method; single implant processing; Annealing; Biological materials; Chemical engineering; Chemical technology; Crystalline materials; Etching; Implants; Power engineering and energy; Silicon; Stacking;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344598
