Title :
Crystallographic effects in implantation of oxygen for SIMOX
Author :
Anc, M.J. ; Cordts, B.F. ; Allen, L.P. ; Krull, W.A. ; Guerra, M.A.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
Abstract :
In this paper we will discuss aspects of directional or crystallographic effects in implantation of oxygen, with emphasis on the possibility of effects of pinhole formation due to the channeling phenomenon, and application of the intentionally channeled implant to obtain better properties of thin film layers
Keywords :
SIMOX; channelling; elemental semiconductors; ion implantation; oxygen; silicon; SIMOX; Si:O; channeling phenomenon; crystallographic effects; directional effects; intentionally channeled implant; oxygen implantation; pinhole formation; thin film layers; Copper; Crystalline materials; Crystallography; Implants; Ion beams; Oxygen; Silicon; Substrates; Transistors; Voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344599
