Title :
Implementation of a 4∶1 multiplexing quantum-effect IC based on RTD circuit topology
Author :
Lee, Jongwon ; Choi, Sunkyu ; Yang, Kyounghoon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
A quantum-effect 4:1 multiplexing IC using Resonant Tunneling Diodes is proposed and fabricated The new proposed IC has been designed based on the power-efficient NDR (negative differential resistance) topology of four CML-MOBILEs, which has the features of low-power and high speed by means of the unique NDR characteristics of the RTD. The 4:1 multiplexing operation of the proposed circuit is confirmed by implementing the circuit using an InP MMIC technology. The fabricated IC has operated up to 30 Gb/s with a low dc-power consumption of 87 m W for a supply voltage of -3.3 V This result shows the first demonstration of the low-power high-speed 4:1 multiplexing IC based on the quantum-effect device technology.
Keywords :
III-V semiconductors; MMIC; current-mode logic; high-speed integrated circuits; indium compounds; integrated circuit design; integrated logic circuits; low-power electronics; multiplexing; nanoelectronics; network topology; resonant tunnelling diodes; CML-MOBILE; InP; InP MMIC technology; RTD circuit topology; current-mode-logic monostable-bistable-transition logic elements; digital integrated circuit design; low-power high-speed 4:1 multiplexing quantum-effect IC; negative differential resistance; power 87 mW; power-efficient NDR topology; quantum-effect device technology; resonant tunneling diode; voltage -3.3 V; Quantum-effect; RTD; digital IC; multiplexer;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2010.5697741
