Modeling of saturation velocity for simulation of deep submicron nMOSFETs

The saturation velocity is one of the most important parameters for simulation of deep submicron nMOSFETs. The saturation velocity is modeled as a function of electron concentration by simulating the same structure as measured resistive gate MOSFETs. The saturation velocity lowering under the strong inversion condition is confirmed in single source/drain nMOSFETs. It is shown that the saturation velocity lowering effect and velocity overshoot effect are comparable in deep submicron nMOSFETs.