Title :
Conduction mechanisms through SIMOX buried oxide
Author :
Yap, Jee-Hoon ; Maung, Tinaung ; Nee, Jocelyn ; Simic, Emilija ; Chung, James E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
In this study, the electric-field, time, and temperature dependence of intrinsic SIMOX buried-oxide conduction has been characterized. Asymmetry was observed between positive and negative applied gate voltage. Two primary conduction regimes have been identified for both polarities: a high-field regime that appears to be due to Fowler-Nordheim tunneling with substantial apparent barrier-height lowering at both injecting interfaces, and a low-field regime likely due to time-dependent trapping current
Keywords :
SIMOX; electron traps; tunnelling; BOX; Fowler-Nordheim tunneling; SIMOX buried oxide; SOI; Si-SiO2; barrier-height; conduction; injecting interfaces; polarities; time-dependent trapping current; Annealing; Capacitors; Current measurement; Electric variables measurement; Implants; Temperature; Time measurement; Tunneling; Very large scale integration; Voltage measurement;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344604
