Shallow oxygen-related donors in bonded and etchback silicon on insulator structures

Author

Warren, W.L. ; Fleetwood, D.M. ; Schwank, J.R. ; Shaneyfelt, M.R. ; Winokur, P.S. ; Devine, R.A.B. ; Maszara, W.P. ; McKitterick, J.B.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1993

fDate

5-7 Oct 1993

Firstpage

28

Lastpage

29

Abstract

We have investigated fundamental material issues that may impact device performance in bonded and etchback SOI (BESOI) wafers using electron paramagnetic resonance (EPR) measurements. We report a new defect identified as an oxygen-related donor in the virgin Si substrates. The donor appears to result from the anneal during the bonding process, not from the actual bonding procedure

Keywords

elemental semiconductors; impurity electron states; oxygen; paramagnetic resonance; paramagnetic resonance of ions and impurities; semiconductor-insulator boundaries; silicon; wafer bonding; BESOI wafers; Si substrates; Si:O; anneal; bonded and etchback silicon on insulator structures; bonding; defect; electron paramagnetic resonance; shallow oxygen-related donors; Aerospace materials; Bonding processes; Corona; Etching; Magnetic field measurement; Paramagnetic materials; Paramagnetic resonance; Silicon on insulator technology; Spectroscopy; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344606

Filename

344606