Photoluminescence and photoreflectance scanning of silicon-on-insulator materials

Author

Hovel, Harold J.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1993

fDate

5-7 Oct 1993

Firstpage

26

Lastpage

27

Abstract

Photoluminescence (PL) and photoreflectance (PR) intensity maps of silicon-on-insulator (SOI) wafers tend to reveal much more than bare silicon. They are often rich in features due to both reflectance variations arising from the optical properties of the multi-layer stack, and to electrical variations across the wafers. PL scanning of these materials reveals many qualitative features useful in tracking uniformity across the wafer and repeatability between wafers from different fabrication runs

Keywords

photoluminescence; photoreflectance; reflectivity; semiconductor-insulator boundaries; silicon; SOI wafers; Si; electrical variations; multi-layer stack; optical properties; photoluminescence scanning; photoreflectance scanning; reflectance; repeatability; silicon-on-insulator materials; uniformity; Gallium arsenide; Laser beams; Optical materials; Photoluminescence; Reflectivity; Semiconductor lasers; Semiconductor materials; Silicon on insulator technology; Surface emitting lasers; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344607

Filename

344607