• DocumentCode
    2284330
  • Title

    Independent control of wafer temperature and beam current on SIMOX material quality

  • Author

    Allen, L.P. ; Cordts, B. ; Krull, W.A. ; Yap, J.H. ; Maung, T. ; Chung, J.

  • Author_Institution
    Ibis Technol. Corp., Danvers, MA, USA
  • fYear
    1993
  • fDate
    5-7 Oct 1993
  • Firstpage
    18
  • Lastpage
    19
  • Abstract
    We present results of the first experiments investigating the effects of wafer temperature during the SIMOX implant which is independent of the beam current. The results show a decreased pinhole density at the lower implant temperature and better dislocation density and substrate/buried oxide interface structure at the higher temperature
  • Keywords
    SIMOX; dislocation density; integrated circuit technology; ion implantation; leakage currents; SIMOX implant; SIMOX material quality; Si-SiO2; beam current; dislocation density; independent control; pinhole density reduction; substrate/buried oxide interface structure; wafer temperature; Atomic force microscopy; Cooling; Fabrication; Image analysis; Implants; Information analysis; Lamps; Power engineering and energy; Silicon; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1993. Proceedings., 1993 IEEE International
  • Conference_Location
    Palm Springs, CA
  • Print_ISBN
    0-7803-1346-1
  • Type

    conf

  • DOI
    10.1109/SOI.1993.344609
  • Filename
    344609
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2284330