Title :
Independent control of wafer temperature and beam current on SIMOX material quality
Author :
Allen, L.P. ; Cordts, B. ; Krull, W.A. ; Yap, J.H. ; Maung, T. ; Chung, J.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
Abstract :
We present results of the first experiments investigating the effects of wafer temperature during the SIMOX implant which is independent of the beam current. The results show a decreased pinhole density at the lower implant temperature and better dislocation density and substrate/buried oxide interface structure at the higher temperature
Keywords :
SIMOX; dislocation density; integrated circuit technology; ion implantation; leakage currents; SIMOX implant; SIMOX material quality; Si-SiO2; beam current; dislocation density; independent control; pinhole density reduction; substrate/buried oxide interface structure; wafer temperature; Atomic force microscopy; Cooling; Fabrication; Image analysis; Implants; Information analysis; Lamps; Power engineering and energy; Silicon; Temperature control;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344609
