DocumentCode
2284341
Title
Synthesis and optical properties of ZnO nanowires for nanophotonics
Author
Kim, Seongsin Margaret ; Shen, Gang ; Wilbert, David S. ; Baughman, William ; Dawahre, Nabil ; Murphy, Michael M. ; York, Matthew ; Kim, Jongsu ; Kung, Patrick
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Alabama, Tuscaloosa, AL, USA
fYear
2010
fDate
17-20 Aug. 2010
Firstpage
285
Lastpage
288
Abstract
High quality ZnO nanowires were synthesized by chemical vapor deposition using both a catalyst-assisted vapor-liquid-solid and a catalyst-free vapor-solid deposition approach. And their optical properties studied using photoluminescence and Raman spectroscopy combined with confocal laser scanning microscopy. Strong UV near band edge along with defect related visible luminescence emissions were observed and their relative intensity compared. We report here the growth of ZnO nanowires by chemical vapor deposition using both a catalyst-assisted vapor-liquid-solid and a catalyst-free vapor-solid deposition approach. The nanowires were characterized through scanning electron microscopy, x-ray diffraction, optical absorption, micro-photoluminescence, confocal Raman spectroscopy, and Terahertz time domain spectroscopy.
Keywords
II-VI semiconductors; Raman spectra; X-ray diffraction; absorption coefficients; chemical vapour deposition; nanofabrication; nanophotonics; nanowires; photoluminescence; scanning electron microscopy; semiconductor growth; terahertz wave spectra; ultraviolet spectra; wide band gap semiconductors; zinc compounds; UV near band edge; X-ray diffraction; ZnO; catalyst-assisted vapor-liquid-solid deposition; catalyst-free vapor-solid deposition; chemical vapor deposition; confocal Raman spectroscopy; confocal laser scanning microscopy; defect related visible luminescence emissions; microphotoluminescence; nanophotonics; nanowires; optical absorption; optical properties; scanning electron microscopy; terahertz time domain spectroscopy; CVD; Raman; Terahertz; ZnO; nanowire; photoluminescence; semiconductor;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location
Seoul
ISSN
1944-9399
Print_ISBN
978-1-4244-7033-4
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2010.5697753
Filename
5697753
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