• DocumentCode
    2284429
  • Title

    SOI technology outlook for sub-0.25 μm CMOS, challenges and opportunities

  • Author

    Davari, B. ; Hovel, H.J. ; Shahidi, G.G.

  • Author_Institution
    SRDC, IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1993
  • fDate
    5-7 Oct 1993
  • Firstpage
    4
  • Lastpage
    5
  • Abstract
    In this paper, the outlook for the SOI technology in the sub-0.25 μm CMOS regime is discussed. The key challenges and opportunities for the SOI technology to become a main stream semiconductor technology are presented
  • Keywords
    CMOS integrated circuits; integrated circuit technology; semiconductor-insulator boundaries; silicon; 0.25 micron; IC fabrication; SIMOX; SOI technology; Si; semiconductor technology; sub-quarter micron CMOS; CMOS technology; Costs; Fabrication; Implants; Isolation technology; Semiconductor films; Silicon; Substrates; Thickness control; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1993. Proceedings., 1993 IEEE International
  • Conference_Location
    Palm Springs, CA
  • Print_ISBN
    0-7803-1346-1
  • Type

    conf

  • DOI
    10.1109/SOI.1993.344614
  • Filename
    344614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2284429