Title :
SOI technology outlook for sub-0.25 μm CMOS, challenges and opportunities
Author :
Davari, B. ; Hovel, H.J. ; Shahidi, G.G.
Author_Institution :
SRDC, IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In this paper, the outlook for the SOI technology in the sub-0.25 μm CMOS regime is discussed. The key challenges and opportunities for the SOI technology to become a main stream semiconductor technology are presented
Keywords :
CMOS integrated circuits; integrated circuit technology; semiconductor-insulator boundaries; silicon; 0.25 micron; IC fabrication; SIMOX; SOI technology; Si; semiconductor technology; sub-quarter micron CMOS; CMOS technology; Costs; Fabrication; Implants; Isolation technology; Semiconductor films; Silicon; Substrates; Thickness control; Threshold voltage;
Conference_Titel :
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location :
Palm Springs, CA
Print_ISBN :
0-7803-1346-1
DOI :
10.1109/SOI.1993.344614
