DocumentCode
2284579
Title
The spherical harmonic method: corroboration with Monte Carlo and experiment
Author
Chang, C.-H. ; Lin, C.-K. ; Liang, W. ; Goldsman, N. ; Mayergoyz, I.D. ; Oldiges, P. ; Melngailis, J.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
225
Lastpage
228
Abstract
We show that the Spherical Harmonic method gives results for the space-dependent energy distribution function that agree with analytical band Monte Carlo simulations on a nanometer length scale, but are calculated approximately 1000 times faster. We also substantiate the Spherical Harmonic method by showing it gives values for MOSFET substrate current that agree with experiment without the use of fitting parameters. We explain the agreement through the use of asymptotic analysis.
Keywords
MOSFET; Monte Carlo methods; hot carriers; semiconductor device models; MOSFET substrate current; analytical band Monte Carlo simulation; asymptotic analysis; energy distribution function; fitting parameters; spherical harmonic method; Boundary conditions; Distribution functions; Educational institutions; Electrons; Harmonic analysis; Ionization; MOSFET circuits; Monte Carlo methods; Numerical models; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621378
Filename
621378
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