Title :
The spherical harmonic method: corroboration with Monte Carlo and experiment
Author :
Chang, C.-H. ; Lin, C.-K. ; Liang, W. ; Goldsman, N. ; Mayergoyz, I.D. ; Oldiges, P. ; Melngailis, J.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
We show that the Spherical Harmonic method gives results for the space-dependent energy distribution function that agree with analytical band Monte Carlo simulations on a nanometer length scale, but are calculated approximately 1000 times faster. We also substantiate the Spherical Harmonic method by showing it gives values for MOSFET substrate current that agree with experiment without the use of fitting parameters. We explain the agreement through the use of asymptotic analysis.
Keywords :
MOSFET; Monte Carlo methods; hot carriers; semiconductor device models; MOSFET substrate current; analytical band Monte Carlo simulation; asymptotic analysis; energy distribution function; fitting parameters; spherical harmonic method; Boundary conditions; Distribution functions; Educational institutions; Electrons; Harmonic analysis; Ionization; MOSFET circuits; Monte Carlo methods; Numerical models; Poisson equations;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621378
