Title :
Performance study of 12-CNTFET and GDI CNTFET based full adder in HSPICE
Author :
Ahmad, Habib Muhammad Nazir ; Islam, Md Shariful ; Jameel, Kazi Muhammad ; Ochi, Arman Riaz ; Hafiz, Rakibul
Author_Institution :
Dept. of Electr. & Electron. Eng., American Int. Univ. - Bangladesh, Dhaka, Bangladesh
Abstract :
This manuscript reports and analyzes 12-CNTFET and GDI CNTFET based full adder implementation at 32 nm level. As figures of merit, stability, power dissipation and Power Delay Product (PDP) are considered for the best overall performance. Intensive HSPICE simulations have been performed to investigate the distribution of the power and delay of the CNTFET-based full adders. Both circuit has noticeable reduction in short current power consumption but in terms of comparison GDI CNTFET shows better performance in both power consumption and Power Delay Product (PDP) variations. The CNTFET-based One bit Full Adder cell demonstrates that it tolerates the PVT (Process, Voltage, and Temperature) variations significantly better than its CMOS counterpart.
Keywords :
SPICE; adders; carbon nanotube field effect transistors; circuit simulation; circuit stability; field effect transistor circuits; power consumption; 12-CNTFET performance study; CMOS; GDI CNTFET-based one bit full adder cell; PDP variations; PVT variations; carbon nanotube field effect transistor; figures of merit; intensive HSPICE simulations; power delay product; power dissipation; process-voltage and temperature variations; short current power consumption; size 32 nm; Adders; CMOS integrated circuits; CNTFETs; Delays; Logic gates; Power dissipation; 12-CNTFET; CMOS; Carbon Nanotube Field Effect Transistor; GDI based Full Adder design; Gate Diffusion Input; Power Delay Product; low power; multiplexer;
Conference_Titel :
Advances in Engineering and Technology Research (ICAETR), 2014 International Conference on
Conference_Location :
Unnao
DOI :
10.1109/ICAETR.2014.7012895
