Comprehensive modeling of plasma source ion implantation

Summary form only given, as follows. The modeling effort in both the short and long term involves the combination of models (modules) for all the principal physics in the PSII process including the chamber and modulator circuit, plasma dynamics, implantation, profiles of micro-material changes and stoichiometry, macro-material changes and measurables. The short term effort concentrates on 1-D modeling of Knoop hardness for a paradigm system: N/spl rarr/Ti. These results are compared to experimental data. The long term goal is the development of a suite of codes linked at run time with an object-oriented scheme in concert with a database of runs. The vision is to provide users with a recipe for PSII processes with adjustable levels of description. The database will allow for judicial selection of inputs for runs and experiments based on previous run outputs. Also discussed are ideas for unique physics studies of high dose rate effects in semiconductor doping and ideas for modeling these effects; the potentially high dose rates available with the pulsed nature of PSII can provide unique spatial control of the amorphous layer produced during implantation in semiconductors.