2-inch full wafer nanoimprinting for GaN-based LEDs

A rapid and cost effective method for nanostructure fabrication in a large area was proposed in this paper. The integration of conventional ultra-violate lithography and self-developed technique was adopted to fabricate 700 nm nanocasts. Polydimethysiloxane (PDMS) was used to be a flexible mold material for the 2-inch wafer area uniform imprinted structures. This rapid structure fabrication technique can be applied to commercialized light emitting diode as a texturing surface to raise the light extraction efficiency significantly.