Title :
Analytical studies of vertical double gate NTFET
Author :
Krishnapriya, S. ; Komaragiri, Rama
Author_Institution :
Dept. of ECE, Jyothi Eng. Coll., Thrissur, India
Abstract :
Continuous down scaling of MOSFET has resulted in increased short channel and tunneling leakages implying the need for alternate devices such as TFET. The tunneling current is controlled by gate voltage by varying the width of band-to-band tunneling barrier. In this paper, analytical study of a vertical double gate TFET is presented. The tunneling probability and current are derived and analyzed to study the behavior of TFET. Synopsis® device simulation tool MEDICI® is used for the simulations.
Keywords :
MOSFET; field effect transistors; MOSFET; gate voltage; short channel; tunneling current; tunneling leakage; vertical double gate NTFET; Gallium arsenide; Indexes; Logic gates; Silicon; Tunneling; analytical studies; band to band tunneling; tunneling leakage; vertical double gate tunnel field effect transistor;
Conference_Titel :
Electronics and Communication Systems (ICECS), 2014 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-2321-2
DOI :
10.1109/ECS.2014.6892630
