A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns

Author

Sumi, T. ; Moriwaki, N. ; Nakane, G. ; Nakakuma, T. ; Judai, Y. ; Uemoto, Y. ; Nagano, Y. ; Hayashi, S. ; Azuma, M. ; Fujii, E. ; Katsu, S.-I. ; Otsuki, T. ; McMillan, L. ; Paz de Araujo, C. ; Kano, G.

Author_Institution

Matsushita Electron. Corp., Kyoto, Japan

fYear

1994

fDate

16-18 Feb. 1994

Firstpage

268

Lastpage

269

Abstract

One of the most important features for ferroelectric material is fast write at low voltage. This feature is used in a 256 kb nonvolatile memory that operates at 3 V power supply with a read/write time of 100 ns. Active current is 3 mA at 200 ns cycle time at 3 V for battery operation. The cell consists of 1 transistor and 1 capacitor per bit (1T1C) permitting a high level of integration. For low-voltage low-power operation, use is made of a preset reference-cell circuit, wordline boost circuits with a ferroelectric boosting capacitor and a divided-cell plate circuit.<>

Keywords

ferroelectric storage; 100 ns; 1T1C; 256 kbit; 3 V; 3 mA; active current; battery operation; cycle time; divided-cell plate circuit; ferroelectric boosting capacitor; integration; low-voltage low-power operation; nonvolatile ferroelectric memory; power supply; preset reference-cell circuit; read/write time; wordline boost circuits; Automatic logic units; Capacitors; Circuits; Electrodes; Ferroelectric films; Ferroelectric materials; Low voltage; Nonvolatile memory; Random access memory; Springs;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1994. Digest of Technical Papers. 41st ISSCC., 1994 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-1844-7

Type

conf

DOI

10.1109/ISSCC.1994.344646

Filename

344646