DocumentCode
2284972
Title
Improved local refinement algorithms for adaptive meshing of process simulation problems
Author
Law, M.E. ; Cerrato, M.
Author_Institution
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
233
Lastpage
235
Abstract
A new method for local grid refinement in unstructured meshes is presented. This technique uses an error estimator to guide the location of refinement, but then refines in a way to preserve or improve the grid quality. These algorithms are described and compared for sample test problems. A final example for an advanced isolation structure is also presented using the new algorithms.
Keywords
isolation technology; mesh generation; semiconductor process modelling; adaptive meshing; error estimator; isolation structure; local grid refinement algorithm; process simulation; unstructured mesh; Computational modeling; Computer errors; Computer simulation; Degradation; Hysteresis; Smoothing methods; Sorting; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621380
Filename
621380
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