• DocumentCode
    2285164
  • Title

    A new numerical formulation for thermal oxidation

  • Author

    Rao, V.S. ; Hughes, T.J.R. ; Kan, E. ; Dutton, R.W.

  • Author_Institution
    Stanford Univ., CA, USA
  • fYear
    1997
  • fDate
    8-10 Sept. 1997
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    A new numerical formulation to model oxidation is proposed. It includes discontinuous shape functions to model two material diffusion-reaction, level-set based interface evolution, viscoelastic constitutive relations, finite deformation and large expansion. Well-posedness and numerical stability of the numerical methods are investigated in detail. Stress-dependent oxidation and residual stresses can be treated in one, two and three dimensions. Traditional gridding problems associated with moving boundaries are resolved by using an Eulerian representation of the interface. The constitutive model is thermodynamically consistent and preserves fundamental properties like objectivity of constitutive equations throughout the process.
  • Keywords
    finite element analysis; oxidation; semiconductor process modelling; Eulerian theory; deformation; diffusion-reaction; expansion; gridding; interface evolution; level set; moving boundary; numerical model; numerical stability; objectivity; residual stress; shape function; stress dependence; thermal oxidation; thermodynamic consistency; viscoelastic constitutive relation; well-posedness; Deformable models; Elasticity; Equations; Numerical models; Numerical stability; Oxidation; Piecewise linear approximation; Residual stresses; Shape; Viscosity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
  • Conference_Location
    Cambridge, MA, USA
  • Print_ISBN
    0-7803-3775-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.1997.621381
  • Filename
    621381