DocumentCode
2285164
Title
A new numerical formulation for thermal oxidation
Author
Rao, V.S. ; Hughes, T.J.R. ; Kan, E. ; Dutton, R.W.
Author_Institution
Stanford Univ., CA, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
237
Lastpage
240
Abstract
A new numerical formulation to model oxidation is proposed. It includes discontinuous shape functions to model two material diffusion-reaction, level-set based interface evolution, viscoelastic constitutive relations, finite deformation and large expansion. Well-posedness and numerical stability of the numerical methods are investigated in detail. Stress-dependent oxidation and residual stresses can be treated in one, two and three dimensions. Traditional gridding problems associated with moving boundaries are resolved by using an Eulerian representation of the interface. The constitutive model is thermodynamically consistent and preserves fundamental properties like objectivity of constitutive equations throughout the process.
Keywords
finite element analysis; oxidation; semiconductor process modelling; Eulerian theory; deformation; diffusion-reaction; expansion; gridding; interface evolution; level set; moving boundary; numerical model; numerical stability; objectivity; residual stress; shape function; stress dependence; thermal oxidation; thermodynamic consistency; viscoelastic constitutive relation; well-posedness; Deformable models; Elasticity; Equations; Numerical models; Numerical stability; Oxidation; Piecewise linear approximation; Residual stresses; Shape; Viscosity;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621381
Filename
621381
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