Title :
A 17 dB gain, 0.1-70 GHz InP HEMT amplifier IC
Author :
Madden, C.J. ; Van Tuyl, R.L. ; Le, M.V. ; Nguyen, L.D.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
Over the last five years, the 0.1 /spl mu/m gate length indium phosphide high electron mobility transistor (InP HEMT) has been taken from first demonstration to a high-yield, manufacturable monolithic microwave integrated circuit (MMIC) process. Discrete InP HEMT devices have shown transconductances (g/sub m/) as high as 1740 mS/mm and cutoff frequencies (f/sub T/) up to 340 GHz and thus are extremely attractive devices for high gain amplifiers in the 30-100 GHz range. For very broadband instrumentation applications, this process is used to realize a fully-integrated, three-stage, shunt-feedback amplifier with 17 dB gain from 100 MHz to 70 GHz, a gain-bandwidth product the authors believe to be the highest reported for any amplifier. In comparison to distributed amplifiers typically used for such broadband applications, this amplifier has higher gain, better low-frequency response, uses less dc power, and yet has good output power capability. Potentially low-cost MMICs of this type could open the millimeter-wave frequencies to commercial applications.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; indium compounds; microwave amplifiers; wideband amplifiers; 0.1 micron; 0.1 to 70 GHz; 17 dB; HEMT amplifier IC; InP; broadband instrumentation; cutoff frequencies; gain-bandwidth product; high electron mobility transistor; high gain amplifiers; low-frequency response; monolithic microwave integrated circuit; output power capability; shunt-feedback amplifier; transconductances; Broadband amplifiers; Distributed amplifiers; Gain; HEMTs; Indium phosphide; MMICs; MODFETs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits;
Conference_Titel :
Solid-State Circuits Conference, 1994. Digest of Technical Papers. 41st ISSCC., 1994 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-1844-7
DOI :
10.1109/ISSCC.1994.344679
