Title :
Molecular dynamics simulations of LATID implants into silicon
Author :
Oldiges, P. ; Huilong Zhu ; Nordlund, K.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
Molecular dynamics simulations of Large-Angle-Tilt Implanted Drain technology are shown. Calculation results are shown of ion range variation as function of implant angle over the entire spectrum of possible implant angles. Through this calculation, it is possible to determine the optimal angles for large tilt angle implants. The simulator also allows for the definition of amorphous layers over a crystalline substrate. Results of these calculations accurately predict effects such as paradoxical profile broadening.
Keywords :
elemental semiconductors; ion implantation; molecular dynamics method; semiconductor process modelling; silicon; LATID implantation; Si; amorphous layer; crystalline substrate; implant angle; ion range; large-angle-tilt implanted drain technology; molecular dynamics simulation; profile broadening; silicon; Amorphous materials; Atomic layer deposition; Atomic measurements; Automotive materials; Crystallization; Implants; Laboratories; Nuclear electronics; Potential energy; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621383
