Molecular dynamics simulations of LATID implants into silicon

Molecular dynamics simulations of Large-Angle-Tilt Implanted Drain technology are shown. Calculation results are shown of ion range variation as function of implant angle over the entire spectrum of possible implant angles. Through this calculation, it is possible to determine the optimal angles for large tilt angle implants. The simulator also allows for the definition of amorphous layers over a crystalline substrate. Results of these calculations accurately predict effects such as paradoxical profile broadening.