Title :
Modeling reverse short channel and narrow width effects in small size MOSFET´s for circuit simulation
Author :
Yuhua Cheng ; Sugii, T. ; Kai Chen ; Zhihong Liu ; Min-Chie Jeng ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Modeling of small size MOSFETs and experimental verification of the model using devices with varying pocket implant processes are presented. The results show that the model can describe reverse short channel and narrow width effects and match the measured characteristics of threshold voltage and saturation current over a wide range of channel lengths and widths down to 0.12 /spl mu/m regime.
Keywords :
MOS integrated circuits; MOSFET; VLSI; circuit analysis computing; integrated circuit design; ion implantation; isolation technology; 0.12 micron; MOSFET; channel lengths; circuit simulation; narrow width effects; pocket implant processes; reverse short channel effects; saturation current; threshold voltage; Circuit simulation; Data mining; Doping; Immune system; Implants; Length measurement; MOSFET circuits; Semiconductor process modeling; Solid modeling; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621384
