Title :
Confined phonons effects, phonon-carrier interactions and thermal transport in graphene-based structures
Author :
Qian, Jun ; Sun, Ke ; Dutta, Mitra ; Stroscio, Michael A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA
Abstract :
Recently graphene has been studied in view of its promise as a material for high-performance electronics. In order to advance the basic understanding of graphene and graphite for graphene-based devices it is necessary to study the phonon modes in these materials as well as their interactions with charge carriers. Moreover, it is necessary to understand the phonon-based thermal properties of these structures; herein, the thermal conductivity is modeled for selected graphene-based structures of finite size. In addition, phonon engineering in finite-sized graphene-based structures will be considered. Models of confined phonon modes will be presented for finite-sized graphene structures. Additionally, the role of phonon confinement in carrier-phonon interactions will be considered in confined phonons in graphene sheets of finite size. As indicated previously, quantum confinement effects are included [1,2] by using previous models for graphene-based structures [3-12]. This presentation will place special emphasis on the deformation potential interaction between confined LO-phonon modes and charge carriers in finite-sized graphene structures of potential interest in nanoscale devices.
Keywords :
graphene; phonons; specific heat; thermal conductivity; C; LO-phonon modes; charge carriers; deformation potential interaction; finite-sized graphene structures; graphene sheets; graphene-based devices; graphite; phonon confinement; phonon effects; phonon engineering; phonon-based thermal properties; phonon-carrier interactions; quantum confinement effects; specific heat; thermal conductivity; thermal transport;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-7033-4
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2010.5697806