Title :
Neutron-induced soft error simulator and its accurate predictions
Author :
Tosaka, Y. ; Satoh, S. ; Itakura, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We developed the Neutron Induced Soft Error Simulator (NISES) to clarify the role of cosmic ray neutrons in soft errors (SEs). A recently proposed nuclear reaction theory forms the foundation of the nuclear reaction database of the NISES. NISES accurately reproduces the measured neutron-induced charge collection data in SOI diode test structures and the neutron-induced SER data in sub-half micron CMOS circuits. The need for neutron-induced SE simulator like NISES should increase with the recognition of the importance of cosmic ray neutron-induced SEs.
Keywords :
CMOS integrated circuits; VLSI; cosmic ray interactions; neutron effects; semiconductor diodes; silicon-on-insulator; NISES; SOI diode test structures; VLSI; cosmic ray neutrons; exterrestrial radiation effects; neutron-induced SER data; neutron-induced charge collection data; neutron-induced soft errors; nuclear reaction database; nuclear reaction theory; sub-half micron CMOS circuits; Circuit testing; Current measurement; Databases; Equations; Laboratories; Microwave integrated circuits; Neutrons; Predictive models; Protons; Wave functions;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621385
