Five AlGaAs/GaAs HBT ICs for a 20 Gb/s optical repeater

Author

Akagi, J. ; Kuriyama, Y. ; Asaka, M. ; Sugiyama, T. ; Iizuka, Norio ; Tsuda, K. ; Obara, M.

Author_Institution

Mater. & Devices Res. Lab., Toshiba Corp., Kawasaki, Japan

fYear

1994

fDate

16-18 Feb. 1994

Firstpage

168

Lastpage

169

Abstract

The development of future ultra high bit rate optical transmission systems is now under way to meet the need for a rapid increase in transmission capacity. The capability of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is already demonstrated by a 10 Gb/s optical transmission unit This paper describes a complete 5-chip set of AlGaAs/GaAs HBT ICs for a 20Gb/s direct detection optical repeater.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; optical communication equipment; repeaters; 20 Gbit/s; AlGaAs-GaAs; AlGaAs/GaAs HBT ICs; AlGaAs/GaAs heterojunction bipolar transistors; capability; optical repeater; optical transmission unit; transmission capacity; ultra high bit rate optical transmission systems; Differential amplifiers; Driver circuits; Gallium arsenide; Heterojunction bipolar transistors; Optical receivers; Preamplifiers; Probes; Radio frequency; Repeaters; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1994. Digest of Technical Papers. 41st ISSCC., 1994 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-1844-7

Type

conf

DOI

10.1109/ISSCC.1994.344684

Filename

344684