Title :
A computationally efficient technique to extract diffused profiles and three dimensional collector resistances of high energy implanted bipolar devices
Author :
Chaudhry, S. ; Chyan, Y.F. ; Carroll, M.S. ; Chen, Abraham Simpson ; Nagy, W.J. ; Lee, J.L. ; Layman, P.A. ; Stevie, F.A. ; Rafferty, C.S. ; Vuong, H.H.
Author_Institution :
Bell Labs., Lucent Technol., Orlando, FL, USA
Abstract :
A computationally efficient technique to extract the diffused profiles and collector resistances of bipolar transistors formed via high energy implantation in a BiCMOS process is developed. The methodology uses two dimensional process and device simulations to extract three dimensional collector resistances. The bias dependence of the collector resistance is also correctly predicted.
Keywords :
BiCMOS integrated circuits; bipolar transistors; doping profiles; electric resistance; electronic engineering computing; ion implantation; semiconductor device models; semiconductor process modelling; 2D process/device simulations; 3D collector resistances; bias dependence; computationally efficient technique; diffused profiles; high energy implanted bipolar devices; three dimensional collector resistances; Area measurement; Computational efficiency; Computational modeling; Contact resistance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electrodes; Implants; Tail;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621386
