Title :
MOSQue: a novel TCAD database system with efficient handling capability on measured and simulated data
Author :
Tatsumi, Taizo ; Ohtani, H. ; Takahashi, S. ; Shimizu, S. ; Mukai, M. ; Komatsu, Y.
Author_Institution :
ULSI R&D Labs., Sony Corp., Kanagawa, Japan
Abstract :
A novel TCAD database system, MOSQue, is introduced. MOSQue is a database system for impurity profile and electric characteristics data. This system has an easy-to-use GUI which enables design engineers to refer to data for ULSI development systematically. MOSQue is also utilized on parameter tuning for process and device simulators for the purpose of precise design specifications as it efficiently administrates the relations on measured and simulated data.
Keywords :
CAD; MOS integrated circuits; ULSI; database management systems; doping profiles; electronic engineering computing; graphical user interfaces; semiconductor process modelling; GUI; MOS ULSI development; MOSQue; TCAD database system; device simulators; electric characteristics data; impurity profile data; parameter tuning; precise design specifications; process simulators; Data engineering; Database systems; Design engineering; Electric variables; Graphical user interfaces; Information retrieval; Semiconductor device measurement; Statistical distributions; Time measurement; Ultra large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location :
Cambridge, MA, USA
Print_ISBN :
0-7803-3775-1
DOI :
10.1109/SISPAD.1997.621388
